The basic concept of Hall Effect theory is that when a current-carrying metallic conductor is located in a magnetic field B perpendicular to the direction of the current flow I, a transverse electrical field EH and a potential difference is produced (Hall effect). The Hall voltage UH is caused by the deflection of the moving charge carriers in the magnetic field due to the Lorentz force, whose direction may predicted by the right hand rule.
Hall Effect apparatus by Acumen Labware (Model no: AL-E192) is designed with precisely engineered modules and accessories. This experimental setup is used to analyze the impact of Hall Effect on semiconductors. Hall Effect is often considered to be an important topic of observation and in-depth study in material science. According to the theory of Hall Effect if electric current flows through a conductor which is placed in a magnetic field, the magnetic field exerts a transverse force on the moving charge carriers, which tends to push them to one side of the conductor, this phenomenon produces a measurable voltage between two sides of the conductor, this voltage referred to as Hall Voltage. This experimental setup can be used to determine many characteristics of a semiconductor sample such as mobility of charge carrier, carrier density, Hall coefficient, Hall voltage etc. We can also study the effect of temperature in a semiconductor and effect on magnetic field with respect to variation in Hall voltage.
In our Hall Effect apparatus we have used digital display for all value read outs to minimize human error. Electromagnets, gauss meter, power supply, etc. are designed and made as separate modules for students to better understand the apparatus and the individual principles involved easily. Safety has always been of prime importance while the designing the apparatus.
The system consists of two cartridges, each of which is equipped with 'p' and 'n' doped germanium crystal .The cartridges can be plugged easily and safely into the D connector system. The Hall Effect set up provides all operating parameters for the samples and displays the Hall voltage, sample current as well as the sample temperature. The doped Germanium samples are used to measure the Hall-voltage as a function of the sample current, the magnetic flux density and the sample temperature.